| PART |
Description |
Maker |
| BSP030-04 BSP030 |
N-channel TrenchMOS intermediate level FET N沟道 TrenchMOS 中间级场效应
N-channel enhancement mode field-effect transistor
From old datasheet system
|
NXP Semiconductors N.V.
Philips
|
| IRF640 IRF640S |
N-channel TrenchMOS transistor(N娌?? TrenchMOS ?朵?绠?
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PSMN070-200B PSMN070-200_SERIES_HG_3 PSMN070-200P |
N-channel TrenchMOS transistor
From old datasheet system
N-channel TrenchMOS ? transistor
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| IRF530N |
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHU108NQ03LT PHU108NQ03LT127 PHB108NQ03LT PHD108NQ |
N-channel TrenchMOS logic level FET
75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PLASTIC, IPAK-3
N-channel TrenchMOS logic level FET
|
NXP Semiconductors N.V.
|
| PHP11N06LT PHB11N06LT PHD11N06LT PHB11N06LT118 |
10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, D2PAK-3
N-channel TrenchMOS TM transistor Logic level FET
N-channel TrenchMOS transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PSMN030-150P PSMN030-150P_1 |
From old datasheet system
N-channel TrenchMOS transistor
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PSMN057-200P PSMN057-200P_1 |
N-channel TrenchMOS(tm) transistor
From old datasheet system
N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PSMN010-55D |
N-channel logic level TrenchMOS(tm) transistor
N-channel logic level TrenchMOS TM transistor
N-channel logic level TrenchMOS transistor(N沟道逻辑电平 TrenchMOS晶体
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BUK7606-55 BUK7606-55A |
TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶体管标准电平FET)
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk
TrenchMOSTM）transistor Standard level FET(TrenchMOSTM）晶体管标准电平FET) TrenchMOS（商标）一级标准场效应晶体管（TrenchMOS（商标）晶体管标准电平场效应管）
|
Philips Semiconductors
3M Company
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
